Next Generation of IGBT
Efficient Chips and the Thermal Cycle Failure Free SLC-package-technology
This concept is convincing because it is based on a standardized package outline while also capable of delivering the highest power density, scalability by easy paralleling, low stray inductance, capability to operate with fast switching devices like SiC MOSFETs and having excellent current sharing balance. In combination with the latest 7th generation IGBT and Diode efficient chips and the thermal cycle failure free SLC-package-technology, the LV100 module provide the best overall performance. In the 1700V, a current rating of 1200A has been realized which represents an outstanding current density considering the compact package footprint of only 144x100mm².

NEXt Genaration IGBT
NEXt Genaration IGBT
LV100 Internal Layout
In high power IGBT modules, multiple chips are connected in a parallel configuration because IGBT chips sizes are limited and usually the rating maximum current is in a range of ~200A for IGBT chips with blocking voltages of 1200V or 1700V.

Achieving Homogeneous Loss and Heat Distribution
Therefore, for the realization of an IGBT module with a current rating of 1200A or more, paralleling of at least six or more IGBT chips is required. While designing the layout, the current balancing between the chips connected in parallel has to be considered. Equally shared chip currents are required for achieving homogeneous loss and heat distribution. A non-homogeneous current distribution causes a certain chip to carry the highest current and this chip will experience the highest temperature which ultimately limits the performance and life-time of the total system. https://www.igbt.tech/